Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Patent
1990-03-30
1992-12-08
Thomas, Tom
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
257316, H01L 2968
Patent
active
051697920
ABSTRACT:
An improvement for a semiconductor device in which memory elements and logic elements are formed on the same substrate is disclosed. The semiconductor device is formed so that a concentration of the field inversion preventive layer below the field oxide film within the region where memory elements are formed is higher than a concentration of the field inversion preventive layer below the field oxide film within the region where logic elements are formed. For the method of manufacturing a semiconductor substrate according to this invention which realizes such a structure, there is a method of allowing the concentrations of field inversion preventive layers within the memory element region and within the logic element region to be differently changed, respectively, and a method of first forming field inversion preventive layers within the both regions so that they have a low concentration, and implementing ion-implantation only to the memory element region for a second time under the state where the logic element region is covered with resist, to thus provide an inversion preventive layer of high concentration.
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patent: 4841481 (1989-06-01), Ikeda
Katoh Katsuto
Naruke Kiyomi
Kabushiki Kaisha Toshiba
Thomas Tom
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