Active solid-state devices (e.g. – transistors – solid-state diode – With means to control surface effects – Insulating coating
Reexamination Certificate
2009-12-14
2010-12-28
Prenty, Mark (Department: 2822)
Active solid-state devices (e.g., transistors, solid-state diode
With means to control surface effects
Insulating coating
C257S280000
Reexamination Certificate
active
07859087
ABSTRACT:
A semiconductor device includes: a semiconductor layer; at least one electrode formed on a semiconductor layer to be in contact with the semiconductor layer; and a passivation film covering the semiconductor layer and at least part of the top surface of the electrode to protect the semiconductor layer and formed of a plurality of sub-films. The passivation film includes a first sub-film made of aluminum nitride.
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Vertiachikh, A.V., et al., “Effect of surface passivation of AlGaN/GaN heterostructure field-effect transistor”, Electronics Letters, Apr. 2002, pp. 388-389, vol. 38 No. 8.
Ishida Hidetoshi
Murata Tomohiro
Tanaka Tsuyoshi
Ueda Daisuke
Ueda Tetsuzo
McDermott Will & Emery LLP
Panasonic Corporation
Prenty Mark
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