Semiconductor device

Details Semiconductor device Semiconductor device

2008-02-01

2010-02-23

Nguyen, Dao H (Department: 2818)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S484000, C257S508000, C257S532000, C257S535000, C257S659000, C257SE23180, C257SE23127, C257SE23002, C257SE23142

Reexamination Certificate

active

07667279

ABSTRACT:
Disclosed is a semiconductor device which has a circuit-forming region. The semiconductor device has a semiconductor substrate, a plurality of insulating interlayer films, a guard ring, and a first MIM capacitor. The insulating interlayer films, which are stacked one upon another, are provided over the semiconductor substrate. The guard ring is formed in the plurality of insulating interlayer films and surrounds the circuit-forming region. The guard ring is separated from an insulating interlayer film including a topmost interconnect. The MIM capacitor is provided between the guard ring and the insulating interlayer film including the topmost interconnect.

REFERENCES:
patent: 7411257 (2008-08-01), Yoshizawa et al.
patent: 7453128 (2008-11-01), Tsutsue et al.
patent: 2004/0150070 (2004-08-01), Okada et al.
patent: 2009/0001515 (2009-01-01), Yamagata
patent: 2006-269519 (2006-10-01), None

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