Semiconductor device

Details Semiconductor device Semiconductor device

2006-10-05

2010-02-02

Richards, N Drew (Department: 2895)

Active solid-state devices (e.g., transistors, solid-state diode

Encapsulated

C361S760000, C257S678000, C257S666000, C257S668000, C257SE23069

Reexamination Certificate

active

07656046

ABSTRACT:
A semiconductor device1is a semiconductor device of the BGA type, and includes a semiconductor chip10, a resin layer20, an insulating layer30, and an external electrode pad40. The resin layer20is constituted by a sealing resin22and an underfill resin24, and covers the semiconductor chip10. The insulating layer30is formed on the resin layer20. The external electrode pad40is formed in the insulating layer30. This external electrode pad40extends through the insulating layer30. One surface S1of the external electrode pad40is exposed in the surface of the insulating layer30, and the other surface S2is located in the resin layer20. A concave portion45is formed in the surface S2of the external electrode pad40. The resin composing the resin layer20enters into the concave portion45.

REFERENCES:
patent: 5355283 (1994-10-01), Marrs et al.
patent: 5668405 (1997-09-01), Yamashita
patent: 2005/0252682 (2005-11-01), Shimoto et al.
patent: 2001-274202 (2002-10-01), None

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