Semiconductor device

Details Semiconductor device Semiconductor device

2007-04-18

2009-06-02

Le, Thong Q (Department: 2827)

Static information storage and retrieval

Read/write circuit

Data transfer circuit

C365S148000, C365S189200, C365S185330

Reexamination Certificate

active

07542357

ABSTRACT:
A phase change memory is provided with a write data register, an output data selector, a write address register, an address comparator and a flag register. Write data is not only written into a memory cell but also retained by the write data register until the next write cycle. If a read access occurs to that address before the next write cycle, data is read out from the register without reading the data from the memory cell array. Without elongating the cycle time, it is possible not only to use a long time to write data into a memory cell therein but also to make longer the interval between the time when a write operation is done and the time when the subsequent read operation is made from that memory cell. As a result, data can be written reliably.

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