Semiconductor device

Details Semiconductor device Semiconductor device

2005-12-08

2009-12-08

Dickey, Thomas L (Department: 2826)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257SE29309

Reexamination Certificate

active

07629642

ABSTRACT:
A semiconductor device includes a semiconductor region having a source region, a drain region, and a channel region provided between the source region and the drain region, a first tunnel insulation film formed on the channel region, a barrier layer formed on the first tunnel insulation film and having an energy barrier, a second tunnel insulation film formed on the barrier layer, a charge storage portion formed on the second tunnel insulation film and comprising an insulation film expressed by SiY(SiO2)X(Si3N4)1-XMZ(where, M denotes an element other than Si, O, and N, and 0≦X≦1, Y>0, and Z≧0), and a control electrode formed on the charge storage portion and controlling a height of the energy barrier.

REFERENCES:
patent: 6680505 (2004-01-01), Ohba et al.
patent: 2002/0140023 (2002-10-01), Ohba et al.
patent: 2002-289710 (2002-10-01), None

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