Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2005-06-13
2009-02-17
Jackson, Jr., Jerome (Department: 2815)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S649000, C257SE29255, C438S275000
Reexamination Certificate
active
07492014
ABSTRACT:
A semiconductor device wherein the same metal gate material is used for both an n-channel CMOS transistor and a p-channel CMOS transistor and a manufacturing method therefor are disclosed. The n-channel transistor includes an impurity region, a first gate laminated body that has a gate oxide film and a gate electrode but does not have a gate electrode sidewall insulating film, and a first silicon nitride film that has a tensile stress and covers the surface of a semiconductor substrate and the first gate laminated body. The p-channel transistor includes an impurity region; a second gate laminated body that has a gate oxide film, a gate electrode, and a gate electrode sidewall insulating film; and a second silicon nitride film that has a compressive stress and covers the surface of the semiconductor substrate and the second gate laminated body.
REFERENCES:
patent: 7205615 (2007-04-01), Tsutsui et al.
patent: 7223647 (2007-05-01), Hsu et al.
patent: 2004/0075148 (2004-04-01), Kumagai et al.
patent: 2005/0145894 (2005-07-01), Chau et al.
patent: 2006/0249794 (2006-11-01), Teh et al.
patent: 2000-31296 (2000-01-01), None
Budd Paul A
Fujitsu Microelectronics Limited
Jackson, Jr. Jerome
Westerman, Hattori, Daniels & Adrian , LLP.
LandOfFree
Semiconductor device does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Semiconductor device, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Semiconductor device will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-4140786