Semiconductor device

Active solid-state devices (e.g. – transistors – solid-state diode – Lead frame – On insulating carrier other than a printed circuit board

Reexamination Certificate

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Details

C439S060000, C439S043000, C439S924100, C438S125000, C257SE23010, C257SE23012

Reexamination Certificate

active

07569917

ABSTRACT:
A semiconductor device includes a semiconductor chip, an insulating base film and first projecting electrodes. The first projecting electrodes are formed in a single row on one face of the semiconductor chip along the edge of the semiconductor chip. This face of the semiconductor chip faces a semiconductor chip mounting face of the base film. The semiconductor device also includes second projecting electrodes formed in a single row outside the row of first projecting electrodes. The height of the second projecting electrodes is smaller than the first projecting electrodes. The semiconductor device also includes first inner leads formed on the semiconductor chip mounting face of the base film. The first inner lead extend to the first projecting electrodes. The semiconductor device also includes an insulating film formed between the first inner leads and the semiconductor chip. The semiconductor device also includes second inner leads formed on the insulating film. The second inner lead extend to the second projecting electrodes.

REFERENCES:
patent: 5825081 (1998-10-01), Hosomi et al.
patent: 5949512 (1999-09-01), Taguchi
patent: 6056573 (2000-05-01), Nishioka
patent: 6464540 (2002-10-01), Sato
patent: 03-276737 (1991-12-01), None

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