Semiconductor device

Details Semiconductor device Semiconductor device

2006-12-28

2009-02-03

Picardat, Kevin M (Department: 2822)

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

C438S627000, C438S639000, C257S750000, C257S763000

Reexamination Certificate

active

07485578

ABSTRACT:
Embodiments relate to a semiconductor device and a method of fabricating semiconductor device, that may uniformly form a barrier layer in a via hole to thus prevent layers from being broken. In embodiments, a method of fabricating a semiconductor device may include forming an interlayer dielectric layer on a substrate, forming via holes selectively on the interlayer dielectric layer, forming a first metal layer on a top surface of the substrate including inner portion of the via hole, forming spacers on sides of the via holes by etching back the first metal layer, forming a second metal layer on the substrate including the spacer, and forming a tungsten layer by depositing tungsten on the second metal layer.

REFERENCES:
patent: 6180517 (2001-01-01), Liou et al.
patent: 6274497 (2001-08-01), Lou
patent: 6509267 (2003-01-01), Woo et al.
patent: 6812140 (2004-11-01), Chang et al.

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