Semiconductor device

Details Semiconductor device Semiconductor device

2006-07-07

2009-06-30

Rose, Kiesha L (Department: 2891)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S391000, C257S392000, C257S903000, C257SE21661, C257SE27098, C257SE27099

Reexamination Certificate

active

07554163

ABSTRACT:
A first semiconductor region has a smaller width along a gate length direction than a second semiconductor region. In this case, the first semiconductor region has a larger width along a gate width direction than the second semiconductor region.

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S.M. Sze and Kwok K. Ng, Physics of Semiconductor Devices Third Edition, Wiley-Interscience John Wiley & Sons, Inc., 2007, pp. 304-306.

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