Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2007-08-15
2009-11-24
Ha, Nathan W (Department: 2814)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257SE27016
Reexamination Certificate
active
07622776
ABSTRACT:
A semiconductor device includes: a substrate including a compound semiconductor, a semiconductor layer formed on a surface of the substrate, a plurality of gate electrodes formed on the semiconductor layer, a plurality of source electrodes formed on the semiconductor layer, a plurality of drain electrodes formed on the semiconductor layer, a via hole configured to extend from a substrate side of the semiconductor layer to a rear surface of the source electrode, a ground electrode which is formed on an inner wall of the via hole and on the rear surface of the substrate and connects the plurality of source electrodes, and a first air bridge interconnection which is formed on a surface side of the source electrode and connects the plurality of source electrodes.
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Ha Nathan W
Kabushiki Kaisha Toshiba
Oblon, Spivak McClelland, Maier & Neustadt, L.L.P.
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