Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2007-06-26
2009-11-10
Weiss, Howard (Department: 2814)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S315000, C257S316000, C257S758000, C257SE23011
Reexamination Certificate
active
07615819
ABSTRACT:
A semiconductor device includes a semiconductor substrate, an insulating film formed above an upper surface of the substrate and including a contact hole penetrating the insulating film, a wiring portion formed on the insulating film, and a contact plug formed in the contact hole and including a first conductive plug formed in a lower portion of the contact hole so that the exposed upper surface of the semiconductor substrate is in contact with the first conductive plug and a second conductive plug formed on the first conductive plug, so that the wiring portion is in contact with the second conductive plug. The first and second conductive plugs have an interface with a height that is lower than a height of the boundary portion relative to an upper surface of the semiconductor substrate.
REFERENCES:
patent: 5144579 (1992-09-01), Okabe et al.
patent: 7326993 (2008-02-01), Kajimoto et al.
patent: 2005/0051831 (2005-03-01), Kajimoto et al.
patent: 2000-150637 (2000-05-01), None
Kabushiki Kaisha Toshiba
Oblon, Spivak McClelland, Maier & Neustadt, L.L.P.
Rao Steven H
Weiss Howard
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