Semiconductor device

Details Semiconductor device Semiconductor device

2007-11-07

2009-10-27

Purvis, Sue (Department: 2826)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257SE21625

Reexamination Certificate

active

07608899

ABSTRACT:
Diffusion layers2-5are formed on a silicon substrate1, and gate dielectric films6, 7and gate lectrodes8, 9are formed on these diffusion layers2-5so as to be MOS transistors. Zirconium oxide or hafnium oxide is used as a major component of gate dielectric films6, 7. Gate dielectric films6, 7are formed, for example, by CVD. As substrate1, there is used one of which the surface is (111) crystal face so as to prevent diffusion of oxygen into silicon substrate1or gate electrodes8, 9. In case of using a substrate of which the surface is (111) crystal face, diffusion coefficient of oxygen is less than 1/100 of the case in which a silicon substrate of which the surface is (001) crystal face is used, and oxygen diffusion is controlled. Thus, oxygen diffusion is controlled, generation of leakage current is prevented and properties are improved. There is realized a semiconductor device having high reliability and capable of preventing deterioration of characteristics concomitant to miniaturization.

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