Semiconductor device

Details Semiconductor device Semiconductor device

2006-03-29

2009-08-25

Nguyen, Dao H (Department: 2818)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S336000, C257S337000, C257SE21632, C257SE21644, C257SE21696, C438S306000, C438S525000, C438S526000

Reexamination Certificate

active

07579651

ABSTRACT:
In a semiconductor device of the present invention, a thin gate oxide film is formed on a P-type diffusion layer. On the gate oxide film, a gate electrode is formed. N-type diffusion layers are formed in the P-type diffusion layer, and the N-type diffusion layer is used as a drain region. The N-type diffusion layer is diffused in a γ shape at least below the gate electrode. With the structure described above, a diffusion region of the N-type diffusion layer expands and comes to be a low-concentration region in the vicinity of a surface of an epitaxial layer. Thus, it is possible to reduce an electric field from the gate electrode and an electric field between a source and a drain.

REFERENCES:
patent: 2002/0074612 (2002-06-01), Bulucea et al.
patent: 2003/0127689 (2003-07-01), Hebert
patent: 2006/0223259 (2006-10-01), Otake et al.
patent: 04-103161 (1992-04-01), None
patent: 2001-250941 (2001-09-01), None
patent: 2002-083941 (2002-03-01), None
patent: 2003-158198 (2003-05-01), None
patent: 2004-104141 (2004-04-01), None
patent: 1995-0007345 (1992-03-01), None
patent: 2003-22086 (2003-03-01), None
patent: 10-385764 (2003-05-01), None

Affiliated with

Also associated with

Rating

Semiconductor device does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Semiconductor device, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Semiconductor device will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-4098485