Semiconductor device

Details Semiconductor device Semiconductor device

2008-07-26

2009-10-27

Phung, Anh (Department: 2824)

Static information storage and retrieval

Systems using particular element

Amorphous

C365S148000

Reexamination Certificate

active

07609545

ABSTRACT:
To improve the reliability of the phase change element, unwanted current should not be flown into the element. Therefore, an object of the present invention is to provide a memory cell that stores information depending on a change in its state caused by applied heat, as well as an input/output circuit, and to turn off the word line until the power supply circuit is activated. According to the present invention, unwanted current flow to the element can be prevented and thereby data destruction can be prevented.

REFERENCES:
patent: 5574679 (1996-11-01), Ohtsuki et al.
patent: 5798964 (1998-08-01), Shimizu et al.
patent: 6768665 (2004-07-01), Parkinson et al.
patent: 6778445 (2004-08-01), Ooishi et al.
patent: 7038961 (2006-05-01), Sakata et al.
patent: 7085154 (2006-08-01), Cho et al.
patent: 7092277 (2006-08-01), Bedeschi et al.
patent: 7154774 (2006-12-01), Bedeschi et al.
patent: 7283387 (2007-10-01), Cho et al.
patent: 7391643 (2008-06-01), Fuji
patent: 8-124377 (1996-05-01), None
patent: 8-124379 (1996-05-01), None
patent: 2003-100084 (2003-04-01), None
Manzur Gill, Tyler Lowrey, and John Park, “Ovonic Unified Memory—A High-Performance Nonvolatile Memory Technology for Stand-Alone Memory and Embedded Applications”, 2002 IEEE International Solid-State Circuits Conference, pp. 202-203.
A. Pirovano, A. L. Lacaita, D. Merlani, A. Benvenuti, F. Pellizzer, and R. Bez, “Electronic Switching Effect and Phase-Change Memory Cells”, 2002 IEEE International Electron Device Meeting, Technical Digest, pp. 923-926.
Y. N. Hwang, J.S. Hong, S. H. Lee, S.J. Ahn, G.T. Jeong, G.H. Koh, H.J. Kim, W.C. Jeong, S.Y. Lee,, J.H. Park, K.C. Ryoo, H. Horii, Y.H. Ha, J.H. Yi, W.Y. Cho, Y.T. Kim, K.H. Lee, S.H. Joo, S.O. Park, U.I. Jeong, H.S. Jeong and Kinam Kim, Completely CMOS-Compatible Phase-Change Nonvolatile RAM Using NMOS Cell Transistors, 2003 Non-Volatile Semiconductor Memory Workshop Digest of Technical Papers, pp. 91-92.

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