Semiconductor device

Details Semiconductor device Semiconductor device

2005-08-02

2009-08-11

Chaudry, M. Mujtaba K (Department: 2112)

Error detection/correction and fault detection/recovery

Pulse or data error handling

Digital data error correction

C714S772000

Reexamination Certificate

active

07574648

ABSTRACT:
When the miniaturization of a DRAM advances, the capacity of a cell capacitor decreases, and further the voltage of a data line is lowered, the amount of read signals remarkably lowers, errors are produced during readout, and the yield of chips lowers. To solve the above problems, the present invention provides a DRAM that: has an error correcting code circuit for each sub-array; detects and corrects errors with said error correcting code circuit in both the reading and writing operations; and further has rescue circuits in addition to said error correcting code circuits and replaces a defective cell caused by hard error with a redundant bit.

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