Semiconductor device

Details Semiconductor device Semiconductor device

2007-03-07

2009-06-16

Pham, Long (Department: 2814)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

On insulating substrate or layer

C438S158000, C438S285000, C438S483000

Reexamination Certificate

active

07547591

ABSTRACT:
One exemplary embodiment includes a semi-conductor device. The semi-conductor device can include a channel including that includes one or more compounds of the formula AxBxCxOx, wherein each A is selected from the group of Zn, Cd, each B is selected from the group of Ga, In, each C is selected from the group Ge, Sn, Pb, each O is atomic oxygen, each x is independently a non-zero integer, and each of A, B, and C are different.

REFERENCES:
patent: 7189992 (2007-03-01), Wager et al.
patent: 7242039 (2007-07-01), Hoffman et al.
patent: 2007/0194379 (2007-08-01), Hosono et al.

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