Semiconductor device

Details Semiconductor device Semiconductor device

2006-05-05

2009-10-06

Jackson, Jr., Jerome (Department: 2815)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257SE23020, C438S225000

Reexamination Certificate

active

07598569

ABSTRACT:
A semiconductor device including: a semiconductor layer; a transistor formed in the semiconductor layer and including a gate insulating layer and a gate electrode, the transistor being a high voltage transistor in which an insulating layer having a thickness greater than the thickness of the gate insulating layer is formed under an end portion of the gate electrode; an interlayer dielectric formed above the transistor; and an electrode pad formed above the interlayer dielectric and positioned over at least part of the gate electrode when viewed from a top side.

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