Semiconductor device

Details Semiconductor device Semiconductor device

2004-09-24

2009-11-03

Doan, Theresa T (Department: 2814)

Active solid-state devices (e.g., transistors, solid-state diode

Housing or package

With window means

C267S251000, C267S251000, C438S116000

Reexamination Certificate

active

07612442

ABSTRACT:
With this semiconductor device, the distortion and cracking of a thinned portion of a semiconductor substrate are prevented to enable high precision focusing with respect to a photodetecting unit and uniformity and stability of high sensitivity of the photodetecting unit to be maintained. A semiconductor device1has a semiconductor substrate10, a wiring substrate20, conductive bumps30, and a resin32. A CCD12and a thinned portion14are formed on semiconductor substrate10. Electrodes16of semiconductor substrate10are connected via conductive bumps30to electrodes22of wiring substrate20. Wiring substrate20is subject to a wettability processing by which a region26athat surrounds a region opposing thinned portion14and regions26bthat extend to the outer side from region 26aare lowered in the wettability with respect to the resin. Insulating resin32fills a gap between outer edge15of thinned portion14and wiring substrate20in order to reinforce the bonding strengths of conductive bumps30.

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