Semiconductor device

Electrical computers and digital processing systems: memory – Addressing combined with specific memory configuration or... – For multiple memory modules

Reexamination Certificate

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

C711S143000, C711S104000, C365S230030

Reexamination Certificate

active

07636808

ABSTRACT:
A semiconductor device employs a SESO memory or a phase change memory which has a smaller memory cell area than SRAM. The semiconductor device has a plurality of memory banks each composed of the SESO or phase change memories, and a cache memory which has a number of ways equal to the ratio of a write speed (m) to a read speed (n). The semiconductor device controls the cache memory such that a write back operation is not repeated on the same memory bank.

REFERENCES:
patent: 5361227 (1994-11-01), Tanaka et al.
patent: 5488711 (1996-01-01), Hewitt et al.
patent: 5530828 (1996-06-01), Kaki et al.
patent: 5999474 (1999-12-01), Leung et al.
patent: 6075740 (2000-06-01), Leung
patent: 6263398 (2001-07-01), Taylor et al.
patent: 6285626 (2001-09-01), Mizuno et al.
patent: 6487135 (2002-11-01), Watanabe et al.
patent: 6704835 (2004-03-01), Garner
patent: 6771531 (2004-08-01), Nishihara
patent: 6848035 (2005-01-01), Akiyama et al.
patent: 7301791 (2007-11-01), Atwood et al.
patent: 2003/0033492 (2003-02-01), Akiyama et al.
patent: 2004/0015646 (2004-01-01), Kook et al.
patent: 2004/0027857 (2004-02-01), Ooishi
patent: 2004/0193782 (2004-09-01), Bordui
patent: 7-093215 (1995-04-01), None
patent: 10-112191 (1998-04-01), None
patent: 11-353871 (1999-12-01), None
patent: A 2003-59265 (2003-02-01), None
patent: A 2003-157687 (2003-05-01), None
patent: 2003-228977 (2003-08-01), None
patent: A 2002-26180 (2003-08-01), None
Atwood, Bryan et al, “SESO Memory: A CMOS compatible with high density embedded memory technology for mobile application,”2002 Symposium on VLSI Circuit Digest of Technical Papers, pp. 2 pages, (2000) USA.
Lai, Stefan et al, “OUM—A 180 nm nonvolatile memory cell element technology for stand alone and embedded applications,”2001 IEEE International Electron Devices Meeting Digest of Technical Papers, 4 pages (2001), USA.
“Combination Memories” searched on the Internet on Apr. 28. 2003 <URL:http://www.sharp-world.com/products/device/flash/cmlist.html>, pp. 1-3.
Hwang, Chorng-Lii et al, “A 2.9ns Random Access Cycle Embedded DRAM with a Destructive-Read Architecture”,2002 Symposium on VLSI Circuits Digest of Technical Papers, pp. 174-175, USA.
Atwood et al, Bryan—“SESO Memory: A CMOS Compatible High Density Embedded Memory Technology for Mobile Applications,” Technical Report of IEICE, Dec. 12, 2002, vol. 102, No. 525, pp. 43-46.

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

Semiconductor device does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Semiconductor device, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Semiconductor device will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-4061705

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.