Semiconductor device

Active solid-state devices (e.g. – transistors – solid-state diode – Combined with electrical contact or lead – Of specified material other than unalloyed aluminum

Reexamination Certificate

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Details

C257S750000, C257S758000, C257S774000, C257SE23011, C438S622000, C438S653000

Reexamination Certificate

active

07459786

ABSTRACT:
A reliable semiconductor device having a multilayer wiring structure formed of copper as a main component material, which constrains occurrence of voids caused by stress migration. In the multilayer wiring structure, a first insulation layer having a high barrier property and a compression stress, and making contact with the upper surface of a first wiring made of copper as a main component material, a second insulation film having a tensile stress, and a third insulation film having a dielectric constant which is lower than those of the first and second insulation film, are laminated one upon another in the mentioned order as viewed the bottom thereof, and a via hole is formed piercing through the first insulation film, the second insulation film and the third insulation film, making contact with the first wiring.

REFERENCES:
patent: 5721157 (1998-02-01), Sunada
patent: 5966606 (1999-10-01), Ono
patent: 6219125 (2001-04-01), Ishikura et al.
patent: 6455891 (2002-09-01), Shimomura et al.
patent: 2004/0227242 (2004-11-01), Noguchi et al.
patent: 2005/0009320 (2005-01-01), Goundar
patent: 2003-257979 (2003-09-01), None
patent: 2003-303880 (2003-10-01), None

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