Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2006-01-12
2008-11-11
Lewis, Monica (Department: 2894)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S401000, C257S409000
Reexamination Certificate
active
07449748
ABSTRACT:
The invention is directed to a method for manufacturing a field plate of a high voltage device. The field plate is located on a drift region of a substrate, wherein an isolation structure is located on the drift region. The method comprises steps of forming a first dielectric layer over the substrate and then forming a first patterned conductive layer on the first dielectric layer, wherein the first patterned conductive layer is located over the isolation structure and exposes a portion of a top surface of the first dielectric layer. The exposed portion of the first dielectric layer is removed until a top surface of the isolation structure so as to form a plurality of vertical fin-type dielectric bottoms.
REFERENCES:
patent: 6190948 (2001-02-01), Seok
patent: 2007/0057293 (2007-03-01), Kao
patent: 2007/0080389 (2007-04-01), Petruzzello et al.
Kao Ching-Hung
Lin Chin-Shun
Jianq Chyun IP Office
Lewis Monica
United Microelectronics Corp.
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