Static information storage and retrieval – Read/write circuit – Including reference or bias voltage generator
Reexamination Certificate
2004-12-14
2008-12-02
Auduong, Gene N. (Department: 2827)
Static information storage and retrieval
Read/write circuit
Including reference or bias voltage generator
C365S194000, C365S226000
Reexamination Certificate
active
07460414
ABSTRACT:
A nonvolatile memory device improves the accuracy of screening testing while applying a voltage at or lower than the limit of the withstand voltage of an element for high voltage in the screening testing. The nonvolatile memory device includes a high voltage production circuit that produces a high voltage, a high voltage waveform conversion circuit to which the high voltage is input and which converts the voltage waveform, and a memory cell section provided with memory cells in which data rewriting is performed as a result of applying the converted high voltage. The high voltage waveform conversion circuit includes a test signal input section TEST and applies the high voltage input from the high voltage production circuit to the memory cell section without converting the voltage waveform when a test signal is input to the test signal input section.
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International Search Report issued in the corresponding International Application No. PCT/JP2004/018605, mailed May 10, 2005.
Masago Noriyuki
Tada Yoshihiro
Auduong Gene N.
Keating & Bennett LLP
Rohm & Co., Ltd.
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