Semiconductor device

Details Semiconductor device Semiconductor device

2006-07-26

2008-12-30

Andújar, Leonardo (Department: 2826)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S173000, C257SE29246

Reexamination Certificate

active

07470958

ABSTRACT:
A semiconductor device includes a field effect transistor and a pn junction diode formed on a substrate. The field effect transistor has a source electrode, a drain electrode and a gate electrode formed on an element forming layer including a plurality of nitride semiconductor layers. The diode includes a p-type nitride semiconductor layer selectively formed on the element forming layer and an ohmic electrode, and has a pn junction formed between an n-type region of a two-dimensional electron gas generated on a heterojunction interface and a p-type region of the p-type nitride semiconductor layer. The diode is electrically connected to the gate electrode and forms a current path for allowing an excessive current caused in the gate electrode to pass.

REFERENCES:
patent: 5304802 (1994-04-01), Kumagai
patent: 5543999 (1996-08-01), Riley
patent: 7067876 (2006-06-01), Yasuhara et al.
patent: 7173288 (2007-02-01), Lee et al.
patent: 2004/0222469 (2004-11-01), Asano et al.
patent: 2005/0164482 (2005-07-01), Saxler
patent: 60-10653 (1985-01-01), None

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