Semiconductor device

Details Semiconductor device Semiconductor device

1995-05-25

1998-11-17

Guay, John

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having schottky gate

438938, H01L 2120, H01L 21338

Patent

active

058375651

ABSTRACT:
Disclosed is a semiconductor device comprising an undoped GaAs layer, an intermediate undoped layer and an undoped Ga.sub.1-x Al.sub.x As layer which are successively provided on a substrate made of a semiinsulating GaAs crystal; the intermediate undoped layer being an undoped In.sub.y Ga.sub.1-y As layer, an undoped GaAs.sub.1-z Sb.sub.z layer, a superlattice layer which includes an undoped In.sub.y Ga.sub.1-y As layer and an undoped GaAs.sub.1-z Sb.sub.z layer, a superlattice layer which includes an undoped In.sub.y Ga.sub.1-y As layer and an undoped GaAs layer, or a superlattice layer which includes an undoped GaAs.sub.1-z Sb layer and an undoped GaAs layer. When applied to a high electron mobility transistor, this semiconductor device affords a high current and a high speed and has the merit of a small dispersion in the threshold voltage thereof.

REFERENCES:
patent: 4163237 (1979-07-01), Dingle et al.
patent: 4663643 (1987-05-01), Mimura
patent: 4797716 (1989-01-01), Chaffin et al.
T.E. Zipperian, et al., "An In.sub.0.2 Ga.sub.0.8 As/GaAs, Modulation-Doped, Strained-layer Superlattice Filed-Effect Transistor", Electron Devices Meeting, Dec. 1983, pp. 696-699.

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