Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – On insulating substrate or layer
Reexamination Certificate
2007-04-05
2008-08-19
Prenty, Mark (Department: 2822)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
On insulating substrate or layer
C438S763000
Reexamination Certificate
active
07413937
ABSTRACT:
A resin material having low dielectric constant is used as an inter-layer insulating film and its bottom surface is contacted with a silicon oxide film across the whole surface thereof. Thereby, the surface may be flattened and capacity produced between a thin film transistor and an pixel electrode may be reduced. Further, it allows to avoid a problem that impurity ions and moisture infiltrate into the lower surface of the resin material, thus degrading the reliability of whole semiconductor device.
REFERENCES:
patent: 3844908 (1974-10-01), Matsuo
patent: 4103297 (1978-07-01), McGreivy
patent: 4226898 (1980-10-01), Ovshinsky
patent: 4239346 (1980-12-01), Lloyd
patent: 4523370 (1985-06-01), Sullivan
patent: 4557036 (1985-12-01), Kyuragi
patent: 4597637 (1986-07-01), Ohta
patent: 4618878 (1986-10-01), Aoyama
patent: 4680580 (1987-07-01), Kawahara
patent: 4759610 (1988-07-01), Yanagisawa
patent: 4800174 (1989-01-01), Ishihara
patent: 4818077 (1989-04-01), Ohwada
patent: 4853760 (1989-08-01), Abe
patent: 4864376 (1989-09-01), Aoki
patent: 4938565 (1990-07-01), Ichikawa
patent: 4949141 (1990-08-01), Busta
patent: 5003356 (1991-03-01), Wakai
patent: 5012228 (1991-04-01), Masuda
patent: 5051570 (1991-09-01), Tsujikawa
patent: 5055899 (1991-10-01), Wakai
patent: 5056895 (1991-10-01), Kahn
patent: 5066110 (1991-11-01), Mizushima
patent: 5084905 (1992-01-01), Sasaki
patent: 5091334 (1992-02-01), Yamazaki
patent: 5117278 (1992-05-01), Bellersen
patent: 5132821 (1992-07-01), Nicholas
patent: 5166085 (1992-11-01), Wakai et al.
patent: 5200846 (1993-04-01), Hiroki
patent: 5206183 (1993-04-01), Dennison
patent: 5227900 (1993-07-01), Inaba
patent: 5229644 (1993-07-01), Wakai et al.
patent: 5233211 (1993-08-01), Hayashi
patent: 5235195 (1993-08-01), Tran
patent: 5286659 (1994-02-01), Mitani
patent: 5287205 (1994-02-01), Yamazaki
patent: 5289016 (1994-02-01), Noguchi
patent: 5306651 (1994-04-01), Masumo
patent: 5327001 (1994-07-01), Waki
patent: 5371398 (1994-12-01), Nishihara
patent: 5414547 (1995-05-01), Matsuo et al.
patent: 5453858 (1995-09-01), Yamazaki
patent: 5474941 (1995-12-01), Mitani
patent: 5488000 (1996-01-01), Zhang
patent: 5495353 (1996-02-01), Yamazaki
patent: 5499123 (1996-03-01), Mikoshiba
patent: 5500538 (1996-03-01), Yamazaki
patent: 5514879 (1996-05-01), Yamazaki
patent: 5529951 (1996-06-01), Noguchi et al.
patent: 5568288 (1996-10-01), Yamazaki
patent: 5583369 (1996-12-01), Yamazaki
patent: 5585951 (1996-12-01), Noda
patent: 5604380 (1997-02-01), Nishimura
patent: 5612799 (1997-03-01), Yamazaki
patent: 5614732 (1997-03-01), Yamazaki
patent: 5641974 (1997-06-01), Den Boer
patent: 5654203 (1997-08-01), Ohtani
patent: 5684365 (1997-11-01), Tang
patent: 5686328 (1997-11-01), Zhang
patent: 5701167 (1997-12-01), Yamazaki
patent: 5705829 (1998-01-01), Miyanaga
patent: 5714968 (1998-02-01), Ikeda
patent: 5721601 (1998-02-01), Yamaji et al.
patent: 5731628 (1998-03-01), Terashima
patent: 5751381 (1998-05-01), Ono
patent: 5763899 (1998-06-01), Yamazaki
patent: 5815223 (1998-09-01), Watanabe et al.
patent: 5818550 (1998-10-01), Kadota
patent: 5821138 (1998-10-01), Yamazaki
patent: 5837619 (1998-11-01), Adachi
patent: 5844254 (1998-12-01), Manning
patent: 5849043 (1998-12-01), Zhang
patent: 5849601 (1998-12-01), Yamazaki
patent: 5859445 (1999-01-01), Yamazaki
patent: 5869363 (1999-02-01), Yamazaki et al.
patent: 5869803 (1999-02-01), Noguchi et al.
patent: 5899547 (1999-05-01), Yamazaki
patent: 5905555 (1999-05-01), Yamazaki
patent: 5933205 (1999-08-01), Yamazaki
patent: 5940053 (1999-08-01), Ikeda
patent: 5943107 (1999-08-01), Kadota et al.
patent: 5946059 (1999-08-01), Yamazaki
patent: 5952708 (1999-09-01), Yamazaki
patent: 5963278 (1999-10-01), Yamazaki
patent: 5990542 (1999-11-01), Yamazaki
patent: 6011277 (2000-01-01), Yamazaki
patent: 6011529 (2000-01-01), Ikeda
patent: 6023075 (2000-02-01), Yamazaki
patent: 6071765 (2000-06-01), Noguchi et al.
patent: 6075580 (2000-06-01), Kouchi
patent: 6169293 (2001-01-01), Yamazaki
patent: 6204101 (2001-03-01), Yamazaki et al.
patent: 6239470 (2001-05-01), Yamazaki
patent: 6252249 (2001-06-01), Yamazaki
patent: 6281520 (2001-08-01), Yamazaki
patent: 6294799 (2001-09-01), Yamazaki et al.
patent: 6331475 (2001-12-01), Yamazaki et al.
patent: 6441468 (2002-08-01), Yamazaki
patent: 6445059 (2002-09-01), Yamazaki
patent: 6501097 (2002-12-01), Zhang
patent: 6635900 (2003-10-01), Yamazaki et al.
patent: 6740599 (2004-05-01), Yamazaki et al.
patent: 6787887 (2004-09-01), Yamazaki
patent: 6800875 (2004-10-01), Yamazaki
patent: 6867434 (2005-03-01), Yamazaki
patent: 6972263 (2005-12-01), Yamazaki et al.
patent: 7034381 (2006-04-01), Yamazaki
patent: 7202551 (2007-04-01), Yamazaki
patent: 2002/0117736 (2002-08-01), Yamazaki
patent: 2005/0082529 (2005-04-01), Yamazaki
patent: 1090062 (1994-07-01), None
patent: 0 376 648 (1990-07-01), None
patent: 0603866 (1994-06-01), None
patent: 0 655 774 (1995-05-01), None
patent: 0 661 581 (1995-07-01), None
patent: 0 689 085 (1995-12-01), None
patent: 0708356 (1996-04-01), None
patent: 1 179 381 (2002-02-01), None
patent: 2 274 723 (1994-08-01), None
patent: 52-004496 (1977-02-01), None
patent: 52-005010 (1977-02-01), None
patent: 55-32026 (1980-03-01), None
patent: 57-020778 (1982-02-01), None
patent: 58-002871 (1983-01-01), None
patent: 59-72745 (1984-04-01), None
patent: 59-172627 (1984-09-01), None
patent: 61-059473 (1986-03-01), None
patent: 61-141174 (1986-06-01), None
patent: 61-223721 (1986-10-01), None
patent: 62-278537 (1987-12-01), None
patent: 63-284522 (1988-11-01), None
patent: 63-292114 (1988-11-01), None
patent: 01-124824 (1989-05-01), None
patent: 01-156725 (1989-06-01), None
patent: 01-183854 (1989-07-01), None
patent: 01-155025 (1989-10-01), None
patent: 1-283839 (1989-11-01), None
patent: 02-144525 (1990-06-01), None
patent: 02-171721 (1990-07-01), None
patent: 02-179615 (1990-07-01), None
patent: 02-234134 (1990-09-01), None
patent: 02-263474 (1990-10-01), None
patent: 03-159250 (1991-07-01), None
patent: 04-086601 (1992-03-01), None
patent: 04-087341 (1992-03-01), None
patent: 04-125683 (1992-04-01), None
patent: 04-220626 (1992-08-01), None
patent: 04-226040 (1992-08-01), None
patent: 04-242724 (1992-08-01), None
patent: 04-269837 (1992-09-01), None
patent: 05-034723 (1993-02-01), None
patent: 05-224197 (1993-09-01), None
patent: 05-315360 (1993-11-01), None
patent: 06-011728 (1994-01-01), None
patent: 06-067009 (1994-03-01), None
patent: 06-138484 (1994-05-01), None
patent: 06-148684 (1994-05-01), None
patent: 06-160875 (1994-06-01), None
patent: 06-175156 (1994-06-01), None
patent: 06-177383 (1994-06-01), None
patent: 06-186578 (1994-07-01), None
patent: 06-222390 (1994-08-01), None
patent: 06-275645 (1994-09-01), None
patent: 06-301052 (1994-10-01), None
patent: 07-064110 (1995-03-01), None
patent: 07-099324 (1995-04-01), None
patent: 07-128685 (1995-05-01), None
patent: 07-128688 (1995-05-01), None
patent: 07-140485 (1995-06-01), None
patent: 07-146491 (1995-06-01), None
patent: 07-211635 (1995-08-01), None
patent: 07-234421 (1995-09-01), None
patent: 07-235490 (1995-09-01), None
patent: 08-006071 (1996-01-01), None
patent: 08-054836 (1996-02-01), None
patent: 08-068990 (1996-03-01), None
patent: 08-122824 (1996-05-01), None
patent: 08-279615 (1996-10-01), None
patent: 09-090425 (1997-04-01), None
patent: 09-197390 (1997-07-01), None
Kim, et al.,; 4.4: Planarized Black Matrix on TFT Structure for TFT-LCD Monitors; 1997; Kiheung, Korea; SID 97 Digest, pp.19-22.
H. Hayashi, et al., “Fabrication of Low-Temparature Bottom-Gate Poly-Si TFTs on Large-Area Substrate by Linear-Beam Excimer Laser Crystallization and Ion Doping Method”, IEDM95 International Electron Devices Meeting technical digest, pp. 829-832, 1995.
Fish & Richardson P.C.
Prenty Mark
Semiconductor Energy Laboratory Co,. Ltd.
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