Semiconductor device

Static information storage and retrieval – Systems using particular element – Flip-flop

Reexamination Certificate

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C365S189110, C365S190000

Reexamination Certificate

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07411813

ABSTRACT:
In case that data are written in a flip-flop circuit by inverting the voltage to be supplied to a pair of write bit lines, the peak of the current waveform flowing in the pair of write bit lines is to be made gentler, whereby reduced power source noise and low power consumption should be achieved. To this end in a semiconductor device wherein flip-flop circuit for holding data, a memory cell including a transfer gate, a pair of write bit lines for writing data in the memory cell, are provided, in case that data are written in the flip-flop circuit by inverting the voltage to be supplied to the pair of write bit lines, the slew rate of the voltage to be supplied to the pair of write bit lines is made equal to predetermined value or less.

REFERENCES:
patent: 4764900 (1988-08-01), Bader et al.
patent: 5574687 (1996-11-01), Nakase
patent: 6335896 (2002-01-01), Wahlstrom
patent: 6665209 (2003-12-01), Osada et al.
patent: 6759881 (2004-07-01), Kizer et al.
patent: 6924663 (2005-08-01), Masui et al.
patent: 2001/0014033 (2001-08-01), Miyamoto et al.
patent: 2005/0099375 (2005-05-01), Moriyama et al.
patent: 10-510087 (1998-09-01), None

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