Semiconductor device

Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode

Reexamination Certificate

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C257S307000

Reexamination Certificate

active

07432545

ABSTRACT:
A capacity element with a simple configuration exhibits excellent production reliability. A semiconductor device100includes a capacity element consisting of a lower electrode102,an SiCN film107and an upper electrode113.In an insulating film101on a semiconductor substrate is formed a groove, in which the lower electrode102is buried. The lower electrode102includes two regions, that is, a first lower electrode103and a second lower electrode105,which are separated from each other via the insulating film101.

REFERENCES:
patent: 6266226 (2001-07-01), Hayashi
patent: 6734489 (2004-05-01), Morimoto et al.
patent: 6975500 (2005-12-01), Hunt et al.
patent: 7045415 (2006-05-01), Yoshitomi et al.
patent: 7060557 (2006-06-01), Zhao et al.
patent: 2001/0010955 (2001-08-01), Chen
patent: 2004/0087098 (2004-05-01), Ng et al
patent: 1303132 (2001-07-01), None
patent: 2001-237375 (2001-08-01), None

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