Semiconductor device

Details Semiconductor device Semiconductor device

2006-12-28

2008-10-21

Soward, Ida M (Department: 2822)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S327000, C257S401000, C257S618000, C257S622000

Reexamination Certificate

active

07439578

ABSTRACT:
A semiconductor device includes a trench formed in a surface of a semiconductor substrate. A conductor is embedded in the trench. A conductive layer is arranged adjacent to the trench on the surface of the semiconductor substrate. Semiconductor elements, which include sources provided by one of the conductor and the conductive layer and drains provided by the other one of the conductor and the conductive layer, are formed in a semiconductor element formation region. A planar wiring layer is embedded in the semiconductor substrate under the entire semiconductor element formation region and connected to the conductor.

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patent: 2006/0226474 (2006-10-01), Ho et al.
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patent: 2002-184980 (2002-06-01), None
patent: 2003-303959 (2003-10-01), None
patent: 2003-303960 (2003-10-01), None

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