Active solid-state devices (e.g. – transistors – solid-state diode – Combined with electrical contact or lead – Die bond
Reexamination Certificate
2006-04-27
2008-09-09
Clark, S. V (Department: 2823)
Active solid-state devices (e.g., transistors, solid-state diode
Combined with electrical contact or lead
Die bond
C257S782000
Reexamination Certificate
active
07423349
ABSTRACT:
The present invention provides a semiconductor device comprising a semiconductor element and a copper member which are bonded to each other by a bismuth-based (Bi-based) bonding material having its melting temperature of not less than 250° C., wherein silver (Ag) is diffused in a region of the bonding material in the vicinity of an interface thereof to the semiconductor element with an inclination of concentration of the silver from the interface, in order to realize a manufacture of the semiconductor device without using lead (Pb) at low cost.
REFERENCES:
patent: 6300234 (2001-10-01), Flynn et al.
patent: 6656770 (2003-12-01), Atwood et al.
patent: 6933505 (2005-08-01), Vuorela
patent: 7038293 (2006-05-01), Choi et al.
patent: 2002/0140059 (2002-10-01), Yamazaki et al.
patent: 2005/0221634 (2005-10-01), Hilty et al.
patent: 0 828 341 (1998-03-01), None
patent: 07-161877 (1995-06-01), None
patent: 10-125856 (1998-05-01), None
patent: 2002-142424 (2002-05-01), None
patent: 2002-261210 (2002-09-01), None
patent: 2002-359328 (2002-12-01), None
Journal of Electronic Materials, vol. 31, No. 11, 2002 p. 1244-1249.
Hiramitsu Shinji
Ikeda Osamu
Ishihara Shosaku
Kajiwara Ryouichi
Matsuyoshi Satoshi
Antonelli Terry Stout & Kraus LLP
Clark S. V
Hitachi , Ltd.
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