Semiconductor device

Details Semiconductor device Semiconductor device

1987-07-29

1988-12-27

James, Andrew J.

357 67, 357 55, 357 49, H01L 2308, H01L 2354

Patent

active

047944455

ABSTRACT:
A semiconductor device has a structure in which two semiconductor substrates are coupled to each other through a semiconductor oxide film and a metal silicide film, and a semiconductor element, for example, a bi-polar transistor is formed in the semiconductor substrate on the metal silicide film side, whereby a metal silicide layer having a high melting point is provided beneath one region of the bi-polar transistor for example, an n.sup.+ buried collector layer and in ohmic contact with the n.sup.+ buried collector layer. An electrical isolation between the adjacent semiconductor elements is made by an insulating layer.

REFERENCES:
patent: 4649411 (1987-03-01), Birrittella

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