Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2005-11-29
2008-03-25
Smith, Matthew (Department: 2823)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S043000, C257S306000, C438S003000, C438S104000
Reexamination Certificate
active
07348617
ABSTRACT:
A semiconductor device comprising a ferroelectric capacitor having improved reliability is disclosed. According to one aspect of the present invention, it is provided a semiconductor device comprising a transistor formed on a semiconductor substrate, a ferroelectric capacitor formed above the transistor and comprising a lower electrode, a ferroelectric film and an upper electrode, a first hydrogen barrier film formed over the ferroelectric capacitor, an insulator formed over the first hydrogen barrier film, a contact plug disposed in the insulator and electrically connected with the upper electrode, a second hydrogen barrier film disposed between the contact plug and the insulator continuously, and a wiring connected with the contact plug.
REFERENCES:
patent: 5661345 (1997-08-01), Wada et al.
patent: 2002/0121699 (2002-09-01), Cheng et al.
patent: 2002/0132469 (2002-09-01), Lee et al.
patent: 2003/0001192 (2003-01-01), Yamanobe
patent: 2003/0027385 (2003-02-01), Park et al.
patent: 2003/0089954 (2003-05-01), Sashida
patent: 2003/0216056 (2003-11-01), Yoon
patent: 2004/0099893 (2004-05-01), Martin et al.
patent: 2005/0173799 (2005-08-01), Jou et al.
patent: 2005/0199928 (2005-09-01), Mikawa et al.
patent: 2005/0224979 (2005-10-01), Marathe et al.
patent: 2006/0261483 (2006-11-01), Tsumura et al.
patent: 2001-291843 (2001-10-01), None
U.S. Appl. No. 11/142,441, filed Jun. 2, 2005, Yoshinori Kumura, et al.
Kumura Yoshinori
Kunishima Iwao
Ozaki Tohru
Shimojo Yoshiro
Shuto Susumu
Kabushiki Kaisha Toshiba
Lee Jae
Smith Matthew
LandOfFree
Semiconductor device does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Semiconductor device, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Semiconductor device will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-3969733