Active solid-state devices (e.g. – transistors – solid-state diode – Non-single crystal – or recrystallized – semiconductor... – Amorphous semiconductor material
Reexamination Certificate
2005-12-12
2008-09-02
Jackson, Jerome (Department: 2815)
Active solid-state devices (e.g., transistors, solid-state diode
Non-single crystal, or recrystallized, semiconductor...
Amorphous semiconductor material
C257S072000, C257S291000, C257SE21414, C349S043000, C349S046000
Reexamination Certificate
active
07420209
ABSTRACT:
The present invention has an object to provide an active-matrix liquid crystal display device that realizes the improvement in productivity as well as in yield. In the present invention, a laminate film comprising the conductive film comprising metallic material and the second amorphous semiconductor film containing an impurity element of one conductivity type and the amorphous semiconductor film is selectively etched with the same etching gas to form a side edge of the first amorphous semiconductor film1001into a taper shape. Thereby, a coverage problem of a pixel electrode1003can be solved and an inverse stagger type TFT can be completed with three photomask. Selected figure is FIG.15.
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Kusuyama Yoshihiro
Suzawa Hideomi
Yamazaki Shunpei
Diaz José R
Jackson Jerome
Robinson Eric J.
Robinson Intellectual Property Law Office P.C.
Semiconductor Energy Laboratory Co,. Ltd.
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