Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2008-01-08
2008-01-08
Warren, Matthew E. (Department: 2815)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S048000, C257S331000, C257S738000, C257SE23021, C257SE23179
Reexamination Certificate
active
11180612
ABSTRACT:
A semiconductor device includes a gate electrode GE electrically connected to a gate portion which is made of a polysilicon film provided in the inside of a plurality of grooves formed in a striped form along the direction of T of a chip region CA wherein the gate electrode GE is formed as a film at the same layer level as a source electrode SE electrically connected to a source region formed between adjacent stripe-shaped grooves and the gate electrode GE is constituted of a gate electrode portion G1formed along a periphery of the chip region CA and a gate finger portion G2arranged so that the chip region CA is divided into halves along the direction of X. The source electrode SE is constituted of an upper portion and a lower portion, both relative to the gate finger portion G2, and the gate electrode GE and the source electrode SE are connected to a lead frame via a bump electrode.
REFERENCES:
patent: 6429532 (2002-08-01), Han et al.
patent: 6479888 (2002-11-01), Hirashima et al.
patent: 6653740 (2003-11-01), Kinzer et al.
patent: 7-249770 (1995-09-01), None
Matsuura Nobuyoshi
Shirai Nobuyuki
Miles & Stockbridge P.C.
Renesas Technology Corp.
Warren Matthew E.
LandOfFree
Semiconductor device does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Semiconductor device, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Semiconductor device will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-3916695