Semiconductor device

Details Semiconductor device Semiconductor device

2007-12-11

2007-12-11

Crane, Sara (Department: 2811)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S348000, C257S350000, C257S351000

Reexamination Certificate

active

11137586

ABSTRACT:
A partial isolation insulating film provided between MOS transistors in an NMOS region and a PMOS region, respectively, has a structure in which a portion protruding upward from a main surface of an SOI layer is of greater thickness than a trench depth, namely, a portion (isolation portion) extending below the surface of the SOI layer, and the SOI layer under the partial isolation insulating film is of greater thickness than the isolation portion.

REFERENCES:
patent: 6495898 (2002-12-01), Iwamatsu et al.
patent: 2002/0110989 (2002-08-01), Yamaguchi et al.
patent: 2005/0078546 (2005-04-01), Hirano et al.
patent: 2000-243973 (2000-09-01), None
patent: 2001-230315 (2001-08-01), None
U.S. Appl. No. 09/466,934, filed Dec. 20, 1999, Yamaguchi et al.
U.S. Appl. No. 11/034,938, filed Jan. 14, 2005, Yamaguchi et al.

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