Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2007-08-07
2007-08-07
Dang, Trung (Department: 2823)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S659000, C257S660000, C257SE31122
Reexamination Certificate
active
11249253
ABSTRACT:
A semiconductor device includes a semiconductor element that is set up on a semiconductor layer, a light shielding wall that is set up around the semiconductor element, a hole that is set up on the light shielding wall, and a wiring layer that is electrically connected to the semiconductor element and is drawn out through the hole to the outside of the light shielding wall. The wiring layer has a pattern including a first part that is located within the hole and a second part that is located on the outside of the hole and has a larger width compared to the width of the first part, the width of the second part being the same with or larger than the width of the hole.
REFERENCES:
patent: 6266110 (2001-07-01), Mizuno et al.
patent: 6704068 (2004-03-01), Murade
patent: 6998299 (2006-02-01), Shibata et al.
patent: 7126175 (2006-10-01), Inoue et al.
patent: 2004/0132262 (2004-07-01), Ayabe et al.
patent: 2003-124363 (2003-04-01), None
Inoue Susumu
Maruo Yutaka
Takeda Yo
Dang Trung
Harness & Dickey & Pierce P.L.C.
Seiko Epson Corporation
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