Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Junction field effect transistor
Reexamination Certificate
2007-12-11
2007-12-11
Toledo, Fernando L. (Department: 2823)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Junction field effect transistor
Reexamination Certificate
active
10989388
ABSTRACT:
The present invention miniaturizes a HEMT element used as a switching element in a radio frequency module. A single gate electrode17is formed in an active region defined by an element separation portion9on a main surface of a substrate1comprising GaAs. The gate electrode17is patterned so as to extend in the vertical direction of the page surface between source electrodes13and drain electrodes14, and to extend in left and right directions at other portions. Thus, the ratio of the gate electrode17disposed outside the active region is reduced, and the area of a gate pad17A is reduced.
REFERENCES:
patent: 6222210 (2001-04-01), Cerny et al.
patent: 2000-332030 (2000-11-01), None
patent: 2001-284367 (2001-10-01), None
Kurokawa Atsushi
Osakabe Shinya
Shigeno Yasushi
Takazawa Hiroyuki
Tange Eigo
Mattingly ,Stanger ,Malur & Brundidge, P.C.
Renesas Technology Corp.
Toledo Fernando L.
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