Semiconductor device

Details Semiconductor device Semiconductor device

2007-12-11

2007-12-11

Toledo, Fernando L. (Department: 2823)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Junction field effect transistor

Reexamination Certificate

active

10989388

ABSTRACT:
The present invention miniaturizes a HEMT element used as a switching element in a radio frequency module. A single gate electrode17is formed in an active region defined by an element separation portion9on a main surface of a substrate1comprising GaAs. The gate electrode17is patterned so as to extend in the vertical direction of the page surface between source electrodes13and drain electrodes14, and to extend in left and right directions at other portions. Thus, the ratio of the gate electrode17disposed outside the active region is reduced, and the area of a gate pad17A is reduced.

REFERENCES:
patent: 6222210 (2001-04-01), Cerny et al.
patent: 2000-332030 (2000-11-01), None
patent: 2001-284367 (2001-10-01), None

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