Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2007-08-07
2007-08-07
Baumeister, B. William (Department: 2891)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257SE21435
Reexamination Certificate
active
11145939
ABSTRACT:
The semiconductor device comprises: a semiconductor substrate (N+substrate110) containing a first conductivity type impurity implanted therein; a second conductivity type impurity-implanted layer (P+implanted layer114) at relatively high concentration, formed on the semiconductor substrate (N+substrate110); a second conductivity type impurity epitaxial layer (P−epitaxial layer111) at relatively low concentration, formed on the second conductivity type impurity-implanted layer (P+implanted layer114); and a field effect transistor100(N-channel type lateral MOSFET100) composed of a pair of impurity diffusion regions (N+source diffusion layer115and N−drain layer116) provided in the second conductivity type impurity epitaxial layer (P−epitaxial layer111) and a gate electrode117provided over a region sandwiched with the pair of impurity diffusion regions (N+source diffusion layer115and N−drain layer116).
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Wolf S. “Silicon Processing for the VLSI Era”, Lattice Press, vol. 2, p. 318.
Baumeister B. William
McGinn IP Law Group PLLC
Movva Amar
NEC Electronics Corporation
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