Semiconductor device manufacturing: process – Formation of semiconductive active region on any substrate – Amorphous semiconductor
Reexamination Certificate
2007-12-11
2007-12-11
Pert, Evan (Department: 2826)
Semiconductor device manufacturing: process
Formation of semiconductive active region on any substrate
Amorphous semiconductor
Reexamination Certificate
active
11393764
ABSTRACT:
An insulating film103for making an under insulating layer104is formed on a quartz or semiconductor substrate100. Recesses105ato105dcorresponding to recesses101ato101dof the substrate100are formed on the surface of the insulating film103. The surface of this insulating film103is flattened to form the under insulating layer104. By this flattening process, the distance L1, L2, . . . , Ln between the recesses106a,106b,106dof the under insulating layer104is made 0.3 μm or more, and the depth of the respective recesses is made 10 nm or less. The root-mean-square surface roughness of the surface of the under insulating film104is made 0.3 nm or less. By this, in the recesses106a,106b,106d, it can be avoided to block crystal growth of the semiconductor thin film, and crystal grain boundaries can be substantially disappeared.
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Mitsuki Toru
Miyanaga Akiharu
Ohtani Hisashi
Yamazaki Shunpei
Pert Evan
Robinson Eric J.
Robinson Intellectual Property Law Office P.C.
Semiconductor Energy Laboratory Co,. Ltd.
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