Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2007-12-25
2007-12-25
Fourson, George R. (Department: 2823)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S329000, C257SE21409, C257SE21615
Reexamination Certificate
active
11030094
ABSTRACT:
ON resistance and leakage current of a vertical power MOSFET are to be diminished. In a vertical high breakdown voltage MOSFET with unit MOSFETs (cells) arranged longitudinally and transversely over a main surface of a semiconductor substrate, the cells are made quadrangular in shape, and in each of the cells, source regions whose inner end portions are exposed to the interior of a quadrangular source contact hole are arranged separately and correspondingly to each side of the quadrangle. Each source region is trapezoidal in shape, and a lower side of the trapezoid is positioned below a gate electrode (gate insulating film), while an upper side portion of the trapezoid is exposed to the interior of the source contact hole. The four source regions are separated from one another by diagonal regions of the quadrangle.
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Iijima Tetsuo
Ishizaka Katuo
Fourson George R.
Miles & Stockbridge P.C.
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