Semiconductor device

Details Semiconductor device Semiconductor device

2007-10-30

2007-10-30

Smith, Zandra V. (Department: 2822)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S355000, C257S335000, C257S557000

Reexamination Certificate

active

11360287

ABSTRACT:
According to a semiconductor device of an embodiment of the present invention, a P-type buried diffusion layer is formed across a substrate and an epitaxial layer. An N-type buried diffusion layer is formed in the P-type buried diffusion layer. An overvoltage protective PN junction region is formed below an element formation region. A breakdown voltage of the PN junction region is lower than a source-drain breakdown voltage. This structure prevents a breakdown current from concentratedly flowing into the PN junction region and protects the semiconductor device from overvoltage.

REFERENCES:
patent: 6288424 (2001-09-01), Ludikhuize
patent: 6909143 (2005-06-01), Jeon et al.
patent: 2003/0127689 (2003-07-01), Hebert
patent: 10-506503 (1998-06-01), None

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