Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2007-10-09
2007-10-09
Quach, T. N. (Department: 2826)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S336000, C257SE29255
Reexamination Certificate
active
11391163
ABSTRACT:
In a semiconductor device of the present invention, an N-type epitaxial layer2is deposited on a P-type substrate1.In the epitaxial layer2,a P-type diffusion layer5to be used as a back gate region is formed. An N-type diffusion layer8to be used as a drain region is formed so as to surround the P-type diffusion layer5.The P-type diffusion layer5and the N-type diffusion layer8partially overlap with each other. By use of a structure described above, a distance between a drain and a source is shortened. Thus, an ON resistance value can be reduced. Moreover, since a concentration gradient can be generated in the drain region, withstand pressure characteristics can be maintained while reducing an element formation region.
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Quach T. N.
Sanyo Electric Co,. Ltd.
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