Semiconductor device

Details Semiconductor device Semiconductor device

2007-11-06

2007-11-06

Crane, Sara (Department: 2811)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S356000

Reexamination Certificate

active

11360286

ABSTRACT:
In a conventional semiconductor device, there is a problem that an N-type diffusion region provided for protecting an element from an overvoltage is narrow and a breakdown current is concentrated so that a PN junction region for protection is broken. In a semiconductor device of the present invention, an N-type buried diffusion layer is formed across a substrate and an epitaxial layer. A P-type buried diffusion layer is formed across a wider region on an upper surface of the N-type buried diffusion layer so that a PN junction region for overvoltage protection is formed. A P-type diffusion layer is formed so as to be connected to the P-type diffusion layer. A breakdown voltage of the PN junction region is lower than a breakdown voltage between a source and a drain. With this structure, the concentration of the breakdown current is prevented so that the semiconductor device can be protected from the overvoltage.

REFERENCES:
patent: 2004/0201061 (2004-10-01), Jeon et al.
patent: 2004/0238913 (2004-12-01), Kwon et al.
patent: 10-506503 (1998-06-01), None

Affiliated with

Also associated with

Rating

Semiconductor device does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Semiconductor device, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Semiconductor device will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-3839575