Semiconductor device

Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode

Reexamination Certificate

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Details

C257S329000, C257S335000, C257S341000, C257S506000

Reexamination Certificate

active

10973946

ABSTRACT:
A semiconductor device includes an active region, an alternating conductivity type layer, and an insulation region surrounding the alternating conductivity type layer provided in a periphery section as a voltage withstanding section. The insulation region is made of an insulator with the critical electric field strength higher than that of the semiconductor and reaches an n+-drain layer on the bottom surface side of the device from a surface on the side on which a surface structure section is formed. In the alternating conductivity type layer, the width of the p-type partition region adjacent to the insulation region is made narrower than the width of the p-type partition region not adjacent to the insulation region to ensure a balanced state of charges at the end of the drift section made up of the alternating conductivity type layer. A high breakdown voltage is ensured with the length of the periphery section shortened.

REFERENCES:
patent: 4754310 (1988-06-01), Coe
patent: 5216275 (1993-06-01), Chen
patent: 5438215 (1995-08-01), Tihanyi
patent: 6103578 (2000-08-01), Uenishi et al.
patent: 6410958 (2002-06-01), Usui et al.
patent: 6521954 (2003-02-01), Kouzuki et al.
patent: 6849900 (2005-02-01), Aida et al.
patent: 6878989 (2005-04-01), Izumisawa et al.
patent: 2002-184985 (2002-06-01), None
patent: 2002-280555 (2002-09-01), None

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