Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2007-06-26
2007-06-26
Crane, Sara (Department: 2811)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S329000, C257S335000, C257S341000, C257S506000
Reexamination Certificate
active
10973946
ABSTRACT:
A semiconductor device includes an active region, an alternating conductivity type layer, and an insulation region surrounding the alternating conductivity type layer provided in a periphery section as a voltage withstanding section. The insulation region is made of an insulator with the critical electric field strength higher than that of the semiconductor and reaches an n+-drain layer on the bottom surface side of the device from a surface on the side on which a surface structure section is formed. In the alternating conductivity type layer, the width of the p-type partition region adjacent to the insulation region is made narrower than the width of the p-type partition region not adjacent to the insulation region to ensure a balanced state of charges at the end of the drift section made up of the alternating conductivity type layer. A high breakdown voltage is ensured with the length of the periphery section shortened.
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Abe Hitoshi
Niimura Yasushi
Nishimura Takeyoshi
Onishi Yasuhiko
Crane Sara
Fuji Electric Device Technology Co. Ltd.
Gebremariam Samuel A.
Rossi Kimms & McDowell LLP
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