Semiconductor device

Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode

Reexamination Certificate

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C257SE29170

Reexamination Certificate

active

11223679

ABSTRACT:
A semiconductor device includes: a semiconductor layer having a shading target region; a semiconductor element provided on the semiconductor layer in the shading target region; a first interlayer dielectric provided on the semiconductor element; a plurality of first shading layers provided on the first interlayer dielectric; a second interlayer dielectric provided on at least the first shading layers; and a second shading layer provided on the second interlayer dielectric and having a predetermined pattern. The second shading layer has such a pattern that the second shading layer is positioned at least between the adjacent first shading layers.

REFERENCES:
patent: 5440510 (1995-08-01), Caprara et al.
patent: 5986284 (1999-11-01), Kusaba et al.
patent: 7160795 (2007-01-01), Batra et al.
patent: 2003/0173675 (2003-09-01), Watanabe et al.
patent: 57-030345 (1982-02-01), None
patent: 58-222546 (1983-12-01), None
patent: 1-87545 (1989-06-01), None
patent: 6-163917 (1994-06-01), None
patent: 06-169102 (1994-06-01), None
patent: 10-163209 (1998-06-01), None
patent: 10-294444 (1998-11-01), None
patent: 11-288934 (1999-10-01), None
patent: 2001-174850 (2001-06-01), None
patent: 2002-009074 (2002-01-01), None
patent: 2003-124363 (2003-04-01), None
patent: 2003-234467 (2003-08-01), None
Communication from Japanese Patent Office re: related application.
Communication from Korean Patent Office regarding counterpart application.

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