Active solid-state devices (e.g. – transistors – solid-state diode – Incoherent light emitter structure – With particular semiconductor material
Reexamination Certificate
2007-05-15
2007-05-15
Huynh, Andy (Department: 2818)
Active solid-state devices (e.g., transistors, solid-state diode
Incoherent light emitter structure
With particular semiconductor material
C257S183000, C257S196000, C257SE33032
Reexamination Certificate
active
11325340
ABSTRACT:
It is an object of the present invention to provide a semiconductor device, which can simultaneously achieve a normally-off mode of HFET and an improvement in Imax, and further achieve an improvement in gmand a reduction in gate leakage current. In order to keep a thin barrier layer13on an operation layer12of a substrate11directly under a gate electrode for mostly contributing to achieve the normally-off mode and also implement the high Imax, it is configured in such a way that a thickness of the barrier layer13can be increased by the semiconductor layer17between gate and source regions and between gate and drain regions. It is therefore possible to achieve the normally-off mode and an improvement in Imaxas compared with an FET in which a thickness of the barrier layer is designed so as to be uniform. An insulating film18with a dielectric constant higher than that of the barrier layer is further inserted between a gate electrode16and the barrier layers13, so that an improvement in gmand a reduction in gate leakage current can be achieved.
REFERENCES:
patent: 6177685 (2001-01-01), Teraguchi et al.
patent: 10173203 (1998-06-01), None
patent: 2000277724 (2000-10-01), None
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Hikita Masahiro
Hirose Yutaka
Tanaka Tsuyoshi
Ueda Daisuke
Ueda Tetsuzo
Huynh Andy
Matsushita Electric - Industrial Co., Ltd.
Nguyen Thinh T
Stevens Davis Miller & Mosher LLP
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