Active solid-state devices (e.g. – transistors – solid-state diode – With means to increase breakdown voltage threshold – Field relief electrode
Reexamination Certificate
2007-04-17
2007-04-17
Pert, Evan (Department: 2826)
Active solid-state devices (e.g., transistors, solid-state diode
With means to increase breakdown voltage threshold
Field relief electrode
C257S544000, C257S373000, C257S242000, C257SE29005, C257SE29012
Reexamination Certificate
active
11000893
ABSTRACT:
A semiconductor device, including: a semiconductor substrate of a first conduction type; an active region used as a function-element-forming region on the semiconductor substrate; a low-resistance region of a second conduction type formed on an outermost periphery of the active region to surround the active region and having contact with the semiconductor substrate, the second conduction type being different from the first conduction type; and an electrode connected to the function element and the low-resistance region. A diode is formed by the semiconductor substrate and the low-resistance region. The function element and the diode are electrically connected in parallel between the semiconductor substrate and the electrode, and, between the semiconductor substrate and the electrode, resistance of the low-resistance region is lower than resistance of an electrical conduction path via the function element.
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Mandala Jr. Victor A.
Pert Evan
Rabin & Berdo P.C.
Rohm & Co., Ltd.
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