Semiconductor device

Details Semiconductor device Semiconductor device

2007-01-02

2007-01-02

Pham, Hoai (Department: 2814)

Active solid-state devices (e.g., transistors, solid-state diode

Gate arrays

With particular signal path connections

C257S207000, C257S758000

Reexamination Certificate

active

10811488

ABSTRACT:
A semiconductor device capable of effectively eliminating noise on multilayered power lines with a bypass capacitor. A first power line is connected to the bypass capacitor. A second power line is a line from which a part located above the bypass capacitor is removed. Contacts connect the first and second power lines. Therefore, noise appearing on the second power line travels to the first power line, resulting in effectively eliminating the noise with the bypass capacitor.

REFERENCES:
patent: 5949098 (1999-09-01), Mori
patent: 6339234 (2002-01-01), Takizawa

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