Semiconductor device

Details Semiconductor device Semiconductor device

2007-07-03

2007-07-03

Baumeister, B. William (Department: 2891)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257SE21639

Reexamination Certificate

active

11129439

ABSTRACT:
A semiconductor device100comprises a silicon substrate102, an N-type MOSFET118including a high concentration-high dielectric constant film108bformed on the silicon substrate102and a polycrystalline silicon film114, and a P-type MOSFET120including a low concentration-high dielectric constant film108aand a polycrystalline silicon film114formed on the semiconductor substrate102to be juxtaposed to the N-type MOSFET118. The low concentration-high dielectric constant film108aand the high concentration-high dielectric constant film108bare composed of a material containing one or more element (s) selected from a group consisting of Hf and Zr. The concentration of the above-described metallic element contained in the low concentration-high dielectric constant film108ais lower than that contained in the high concentration-high dielectric constant film108b.

REFERENCES:
patent: 7023064 (2006-04-01), Park et al.
patent: 2003/0201505 (2003-10-01), Kurata
patent: 2005/0224897 (2005-10-01), Chen et al.
patent: 2002-280461 (2002-09-01), None
patent: 2004-103737 (2004-04-01), None
patent: 2004-214376 (2004-07-01), None
patent: 2005-217272 (2005-08-01), None
C Hobbs et al., “Fermi Level Pinning at the PolySi/Metal Oxide Interface”, 2003 Symposium on VLSI Technology Digest of Technical Papers, 4-89114-0335-6/03, APRDL, Digital DNA Laboratories, Motorola, Austin, TX.

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